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Discussing the core components of optical communication: hea

2026-03-30 10:47:47    作者:admin
The continuous advancement of new-generation information technology applications such as artificial intelligence (AI) has generated a strong demand for data throughput and computing power consumption, presenting market opportunities for the optical communication industry, which excels in high-capacity and long-distance transmission. Optical communication, a communication method that utilizes light waves as the transmission medium, relies on semiconductor lasers as the light source to produce stable, high-intensity light beams for high-speed data transmission. However, due to non-radiative recombination losses and free carrier absorption within the active region of the laser chip, as well as resistance present in various layers of materials, semiconductor lasers generate a significant amount of heat during operation. If the heat cannot be dissipated in a timely manner, it will affect various performance parameters of the laser, such as wavelength red shift, increased threshold current, reduced slope efficiency, decreased power, and even laser failure in severe cases. Therefore, thermal packaging technology is crucial for ensuring the stable operation of lasers. 
Semiconductor laser heat dissipation and packaging structure 
Generally, the main cooling and packaging methods for high-power semiconductor lasers include natural convection heat sink cooling, microchannels, electrical cooling, and spray cooling. Among them, natural convection heat sink cooling utilizes high thermal conductivity materials as heat sinks, increasing heat dissipation by expanding the natural convection heat dissipation area to reduce the temperature of the laser chip. It is easy to process and assemble and is a commonly used cooling method. Currently, copper with high thermal conductivity is commonly used as the heat sink for semiconductor lasers. However, the thermal expansion coefficient of copper (16.5×10-6/K) is significantly different from that of GaAs, the main component of semiconductor laser chips (6.4×10-6/K). This results in the heat sink contracting at a faster rate than the chip during cooling, causing the chip to experience compressive stress and bend into a convex shape, affecting the output performance of the laser. Therefore, it is necessary to add a transition heat sink with high thermal conductivity and a coefficient of thermal expansion close to that of the chip between the chip and the conventional heat sink. At the same time, to make the active area of the laser chip emit light closer to the heat sink, reduce the heat transfer path, and facilitate faster heat transfer, it is also necessary to use solder to attach the semiconductor laser chip to the transition heat sink, forming a flip-chip packaging structure with the chip facing downwards. 
01 Selection of Transition Heat Sinks The thermal conductivity, thermal expansion coefficient, and other characteristic parameters of transition heat sink materials play a crucial role in the heat dissipation capacity and structural stability of devices. Currently, commonly used transition heat sink materials for semiconductor lasers include aluminum nitride ceramics, silicon carbide ceramics, tungsten-copper alloys, copper-diamond composites, and graphene films. (1) Ceramic Heat Sinks Such as Aluminum Nitride and Silicon Carbide Ceramics Ceramic materials such as aluminum nitride and silicon carbide have thermal expansion coefficients close to those of laser chips (4.84×10-6/K and 4.5×10-6/K, respectively), high thermal conductivity (180W~260W/(m·K) and 120~150W/(m·K), respectively), and meet the requirements for gold wire bonding and solder pre-placement. They are not only suitable for small-volume, high-integration packaging but also meet the application needs of various secondary packaging. In addition, they have advantages such as high hardness, high wear resistance, and high chemical stability. Ceramic Heat Sinks for High-Power Semiconductor Lasers (Source: Juexin Electronics) (2) Tungsten-Copper Alloy Tungsten-copper alloy is a two-phase homogeneous mixture of tungsten and copper that is neither miscible nor forms intermetallic compounds. It is usually prepared by powder metallurgy, which utilizes both the low expansion characteristics of tungsten and the high thermal conductivity of copper. By changing the composition ratio of the material, its thermal expansion coefficient and electrical and thermal conductivity can be adjusted to better suit the laser chip. Tungsten-Copper Heat Sinks for Lasers (Source: Zhongtian Rocket) (3) Copper/Diamond Composites Diamond has a high thermal conductivity of up to 2000W/(m·K) and a low thermal expansion coefficient. However, its growth is difficult, and due to its high hardness, processing such as cutting, surface smoothing and polishing, and metallization is challenging and extremely costly. Therefore, diamond can be compounded with metals such as copper to achieve high thermal conductivity and adjustable thermal expansion by adjusting the volume fraction of diamond, meeting the requirements of system heat dissipation and assembly processes. (Image Source: Yanyan Institute of Technology) (4) Graphene Film Graphene is a two-dimensional crystal, with a single-layer lateral thermal conductivity that can be as high as 5300 
W/(m·K), which is much higher than that of heat sink materials such as silicon carbide and aluminum nitride. By directly covering a layer of graphene film on the chip, the high in-plane thermal conductivity of the graphene-based film can be utilized to quickly transfer and disperse the heat generated in the active area laterally. At the same time, due to the advantages of light weight and good flexibility of the graphene film, the chip and the graphene-based film can be closely attached without the need for solder, without introducing excessive thermal stress during the packaging process. This results in less stress in the active area, ensuring the reliability of the semiconductor laser. Graphene film (Source: Zhuzhou Chenxin Medium and High Frequency Equipment Co., Ltd.) 
02 Selection of Solder For semiconductor lasers, heat needs to be transferred to the transition heat sink layer through the solder layer. Therefore, selecting the appropriate solder is crucial to ensure the long-term stable operation of semiconductor lasers. Generally, when selecting solder, in addition to considering thermal conductivity and coefficient of thermal expansion, it is also required to have an appropriate melting temperature range with the heat sink material and provide sufficient wettability to form a metallurgical bond between the chip and the heat sink. At the same time, the solder should also have sufficient ductility to reduce thermal stress deformation between the chip and the heat sink. Currently, commonly used solders include soft solders such as indium (In) solder and nano-silver solder paste, as well as hard solders such as gold-tin solder. (1) Indium (In) Solder Indium solder has advantages such as low melting point, good ductility, and good thermal conductivity. The packaging process is simple and suitable for rapid packaging. However, indium is prone to oxidation, forming indium oxide (In2O3) films, which affect conductivity. Moreover, when the laser operates at high temperatures, indium tends to grow into elongated crystal structures, known as "indium whiskers," causing fatigue in the solder layer and ultimately leading to laser damage. (2) Nano-Silver Solder Paste Nano-silver solder paste is prepared by mixing nano-sized silver particles with binders, surfactants, etc., with nano-sized silver particles accounting for more than 80%. Due to the small particle size of the nano-sized silver particles, they exhibit size effects, and the sintering process can be directly solidified without going through liquid-phase sintering. The sintering temperature can be as low as 100°C, while its thermal conductivity can be as high as 240 
W/(m·K), with a melting point as high as 960℃, it can work stably at high temperatures and is gradually being applied to many high-power electronic devices. (3) Gold-tin solder: The brazing temperature of gold-tin solder is moderate. During the brazing process, based on the eutectic composition of the alloy, a small degree of superheat can cause the alloy to melt, wet, and solidify quickly, making it suitable for the assembly of components that require high stability. The high gold content in the alloy results in low oxidation on the material surface. If vacuum or a reducing gas mixture such as nitrogen and hydrogen is used during the brazing process, no flux is required. In addition, gold-tin solder has many advantages such as excellent wettability, good creep resistance, and high thermal conductivity. However, the tensile strength of gold-tin solder is as high as 276 
MPa, it is prone to elastic deformation under stress, exhibits poor ductility, and tends to introduce stress during the sintering process. Additionally, compared to other solders, gold-tin solder is more expensive. 
Summary 
With the increasing demand for data transmission capabilities driven by new-generation information technologies such as AI, the packaging technology of semiconductor lasers, as one of the core components in optical communication, has become a hot research topic. Due to the significant difference in thermal expansion coefficients between copper heat sinks and chips, semiconductor lasers often utilize soldering techniques involving the introduction of indium (In), nano-silver, gold-tin alloy, etc. between the heat sink and the substrate. Materials such as aluminum nitride ceramics, silicon carbide ceramics, tungsten-copper alloy, copper-diamond composite materials, and graphene films are used as transitional heat sinks. Additionally, a flip-chip packaging structure with the chip facing down is adopted. This not only effectively reduces the temperature of the active area during device operation but also mitigates thermal stress and thermal strain introduced by mismatched thermal expansion coefficients between various layers of the structure, thereby enhancing the reliability of the device packaging.
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