project

unit

Al2O3

Al2O3

AlN

Si3N4

content

%

96

99.6

/

/

density

g/cm3

3.7

3.9

3.3

3.3

thermal conductivity

25℃（W/m.K)

＞24

≥30

＞170

＞83

coefficient of thermal expansion

（25-300℃）x10-6/℃ 

7.0

7.2

4.6

2.9

flexural strength

MPa

＞350

＞420

＞310

＞830

modulus of elasticity

GPa

＞320

＞380

＞320

＞320

dielectric constant

1MHz

9.4

9.9

8.5

9.0

Tangent of dielectric loss angle

1MHz

0.0004

0.0001

0.0003

0.002

electric strength

KV/mm

＞15

＞15

＞14

＞15

volume resistivity

25℃（Ω·cm ）

＞1014

＞1014

＞1014

＞1014

substrate thickness

0.15mm

0.2mm

0.25mm

0.3mm

0.381mm

0.5mm

0.635mm

metal layer condition

Ti layer: 80-150nm; Cu transition layer: 600nm; Cu electroplating layer: 3-100μm;

project

unit

Al2O3（96%）

Al2O3（99.6%）

AlN

Si3N4

Maximum size

mm

101.6*101.6

101.6*101.6

101.6*101.6

101.6*101.6

Boundary dimension tolerance

mm

±0.1

±0.1

±0.1

±0.1

Product thickness tolerance

/

±7%

±7%

±7%

±7%

line width, line spacing

mm

≥0.05

≥0.05

≥0.05

≥0.05

warp

/

≤4‰

≤4‰

≤4‰

≤4‰

solderability

/

＞95

＞95

＞95

＞95

Ra of copper surface

μm

≤1

≤1

≤1

≤1

Application temperature range

℃

（-55，600）

（-55，600）

（-55，600）

（-55，600）

surface treatment